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| 2SD2704K / 2SD2705S Transistors For Muting (20V, 0.3A) 2SD2704K / 2SD2705S Features 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7 (Typ.) External dimensions (Unit : mm) 2SD2704K 2.90.2 1.90.2 0.95 0.95 (1) (2) 1.1+0.2 -0.1 0.80.1 (3) +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions 1.6+0.2 -0.1 2.80.2 0 to 0.1 0.3 to 0.6 Structure Epitaxial planar type NPN silicon transistor ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: XL (1) Emitter (2) Base (3) Collector 2SD2705S 40.2 20.2 30.2 (15Min.) 0.45+0.15 -0.05 3Min. 2.5 +0.4 -0.1 5 0.5 0.45 +0.15 -0.05 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 20 25 0.3 0.2 0.3 150 -55 to +150 Unit V V V A W C C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SD2704K dissipation 2SD2705S Junction temperature Storage temperature 1/4 2SD2704K / 2SD2705S Transistors Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ron Min. 50 20 25 - - - 820 - - - Typ. - - - - - 50 - 35 3.9 0.7 Max. - - - 0.1 0.1 100 2700 - - - Unit V V V A A mV - MHz pF IC=10A IC=1mA IE=10A VCB=50V VEB=25V Conditions IC/IB=30mA/3mA VCE=2V, IC=4mA VCE=6V, IE= -4mA, f=10MHz VCB=10V, IE=0A, f=1MHz IB=5mA, Vi=100mV(rms), f=1kHz Measured using pulse current Packaging specifications and hFE Package Code Type 2SD2704K 2SD2705S - Basic ordering unit (pieces) Taping T146 3000 TP 5000 - Electrical characteristic curves 1000 VCE=2V Ta=125C 100 25C 10 -40C 1000 VCE=6V Ta=125C 100 25C 10 -40C 10000 VCE=2V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Ta=125C DC CURRENT GAIN : hFE 1000 Ta=25C Ta= -40C 100 0.1 0.1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.1 0 10 0.2 0.4 0.6 0.8 1 1.2 BASE TO EMITTER VOLTAGE : VBE(ON) (V) 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE(ON) (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics ( ) Fig.2 Grounded emitter propagation characteristics ( ) Fig.3 DC current gain vs. collector current ( ) 2/4 2SD2704K / 2SD2705S Transistors 10000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=6V 10000 10000 IC/IB=10/1 IC/IB=20/1 Ta=125C DC CURRENT GAIN : hFE 1000 1000 1000 Ta=25C Ta= -40C 100 100 Ta=125C 100 Ta=125C 10 Ta=25C 10 Ta=25C Ta= -40C 1 Ta= -40C 1 10 1 10 100 1000 1 10 100 1000 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) BASE SATURATION VOLTAGE : VBE(sat) (mV) 10000 IC/IB=50/1 10000 BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) IC/IB=10/1 10000 IC/IB=20/1 1000 Ta=125C 100 1000 Ta= -40C 1000 Ta= -40C Ta=25C 10 Ta= -40C Ta=25C Ta=125C Ta=25C Ta=125C 1 1 10 100 1000 100 1 10 100 1000 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Fig.9 Base-emitter saturation voltage vs. collector current ( ) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10000 TRANSITION FREQUENCY : fT (MHz) IC/IB=50/1 10000 Ta=25C f=50MHz IE=0A 100 Ta=25C f=1MHz IE=0A 10 1000 Ta= -40C 1 Ta=25C Ta=125C 100 1 10 100 1000 1 1 10 EMITTER CURRENT : IE (mA) 100 0.1 1 10 100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Base-emitter saturation voltage vs. collector current ( ) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 2SD2704K / 2SD2705S Transistors 100 Ta= 25C ON RESISTANCE : Ron () 100 Ta= 25C ON RESISTANCE : Ron () 10 10 1 1 0.1 See Fig.15 0.01 0.1 1 10 100 0.1 See Fig.16 0.01 0.1 1 10 100 BASE CURRENT : IB (mA) BASE CURRENT : IB (mA) Fig.13 Output-on resistance vs. base current ( ) Fig.14 Output-on resistance vs. base current ( ) Ron measurement circuit RL=1k RL=1k Input Vi 100mV(rms) 1V(rms) f=1kHz v0 vi-v0 V Output v0 IB Input Vi 100mV(rms) 1V(rms) f=1kHz v0 vi-v0 V Output v0 IB Ron= xRL Ron= xRL Fig.15 Ron measurement circuit ( ) Fig.16 Ron measurement circuit ( ) 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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